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THICKNESS MEASURING APPARATUS, THICKNESS MEASURING METHOD, AND WET ETCHING APPARATUS AND WET ETCHING METHOD UTILIZING THEM
THICKNESS MEASURING APPARATUS, THICKNESS MEASURING METHOD, AND WET ETCHING APPARATUS AND WET ETCHING METHOD UTILIZING THEM
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机译:厚度测量装置,厚度测量方法以及利用它们的湿法蚀刻装置和湿法蚀刻方法
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摘要
At each measurement time, measurement light is supplied from a measurement light source 11, and interference light obtained when reflected light from a semiconductor wafer W and reference light from a reference light generating section 14 are coupled is detected by a photodetector 15. A thickness calculating section 16 obtains a light intensity distribution representing the correlation between the light intensity of the interference light and the reference optical path length, selects a wafer upper surface peak and wafer lower surface peak from a plurality of light intensity peaks in the light intensity distribution using a predetermined selection criterion, and calculates the thickness of the semiconductor wafer W from the optical path length difference between the light intensity peaks. With this arrangement, a thickness measuring apparatus and thickness measuring method capable of measuring the thickness of a semiconductor wafer during execution of wet etching independently of the presence of an etchant, and a wet etching apparatus and wet etching method using the thickness measuring apparatus and method are implemented.
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