首页> 外国专利> Semiconductor switching device with a multi-source power FET having a sense current path allowing a predetermined number of reconnection attemps before shutdown

Semiconductor switching device with a multi-source power FET having a sense current path allowing a predetermined number of reconnection attemps before shutdown

机译:具有多源功率FET的半导体开关器件,其具有感应电流路径,允许在关机前进行预定次数的重新连接尝试

摘要

A reference current (Iref) that includes a constant component current (Irefc) and a transient component current (Ireft) is fed to the reference FET (QB) such that a source potential (VSA) of the main FET (QA) when a load current (ID) flowing a main FET (QA) is not within the range of an over-current containing a transient component is not lower than a source potential (VSB) of a reference FET (QB). A reference current (Iref) vibrates by detecting that a source potential (VSA) of the main FET is lower than a source potential (VSB) of a reference FET. A vibration number of times is counted up to a predetermined number of times, thereby turning OFF the main FET (QA).
机译:将包括恒定分量电流(Irefc)和瞬态分量电流(Ireft)的参考电流(Iref)馈送到参考FET(QB),以便在负载时主FET(QA)的源极电势(VSA)流过主FET(QA)的电流(ID)不在包含瞬态分量的过电流的范围内,该过电流不低于参考FET(QB)的源极电势(VSB)。通过检测主FET的源极电势(VSA)低于参考FET的源极电势(VSB),使参考电流(Iref)振动。将振动次数计数到预定次数,从而关闭主FET(QA)。

著录项

  • 公开/公告号EP1349251A3

    专利类型

  • 公开/公告日2006-09-13

    原文格式PDF

  • 申请/专利权人 YAZAKI CORPORATION;

    申请/专利号EP20030011026

  • 发明设计人 OHSHIMA SHUNZOU;

    申请日2001-07-24

  • 分类号H02H3/087;H03K17/082;

  • 国家 EP

  • 入库时间 2022-08-21 21:30:52

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