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PROCESS FOR PRODUCING EXTREMELY FLAT MICROCRYSTALLINE DIAMOND THIN FILM BY LASER ABLATION METHOD

机译:激光烧蚀法制备极扁平微晶金刚石薄膜的工艺

摘要

Diamond thin films deposited by known PLD processes are composed of diamond crystal grains with a size of about 1 µm and have an irregular surface.;A process for producing an ultraflat nanocrystalline diamond thin film by laser ablation includes creating atomic hydrogen and a supersaturated state of carbon in a space between a target and a substrate in a hydrogen atmosphere inside a reaction chamber at a substrate temperature of 450°C to 650°C, a laser energy of 100 mJ or more, and a target-substrate distance of 15 to 25 mm to enable the growth of an ultraflat, single-phase nanocrystalline diamond thin film containing substantially no non-diamond component. The hydrogen atmosphere has a sufficient pressure to selectively completely etch off sp2 bond fractions (graphite fractions) deposited on the substrate with sp3 bond fractions remaining.
机译:通过已知的PLD工艺沉积的金刚石薄膜由尺寸约为1μm的金刚石晶粒组成,并且具有不规则的表面。通过激光烧蚀生产超平纳米晶金刚石薄膜的工艺包括产生原子氢和过饱和状态的金刚石。基板温度为450°C至650°C,激光能量为100 mJ或更高,目标基板距离为15至25时,在反应室内的氢气气氛中,靶材与基板之间的空间中的碳可以使基本上不含非金刚石成分的超平单相纳米晶金刚石薄膜生长。氢气氛具有足够的压力以选择性地完全蚀刻掉沉积在衬底上的sp2键合部分(石墨部分),并保留sp3键合部分。

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