首页> 外国专利> Optical pumped semiconductor chip and vertical external cavity surface emitting laser system using the same

Optical pumped semiconductor chip and vertical external cavity surface emitting laser system using the same

机译:光泵浦半导体芯片和使用其的垂直外腔表面发射激光器系统

摘要

The present invention relates to an optical pumping semiconductor chip and a vertical external cavity surface emitting laser system using the optical pumping semiconductor chip, wherein the optical pumping semiconductor chip has a plurality of absorbing layers stacked on top of the first current blocking layer; A quantum well layer is interposed between each of the absorbing layers; A second current blocking layer is formed on an uppermost absorbing layer of the absorbing layers; A distributed Bragg Reflection (DBR) mirror having a width W2 smaller than the width W1 of the second current blocking layer is formed on the second current blocking layer.;Therefore, in the present invention, the DBR mirror of the optical pumping semiconductor chip leaves only a predetermined area where the pumping light is irradiated and removes the rest, thereby reducing the volume of the DBR mirror and thus facilitating heat dissipation.
机译:本发明涉及一种光泵浦半导体芯片和使用该光泵浦半导体芯片的垂直外腔表面发射激光器系统,其中该光泵浦半导体芯片具有堆叠在第一电流阻挡层之上的多个吸收层。在各吸收层之间夹有量子阱层。在所述吸收层的最上吸收层上形成第二电流阻挡层。在第二电流阻挡层上形成宽度W2小于第二电流阻挡层宽度W1的分布式布拉格反射(DBR)反射镜。因此,在本发明中,光泵浦半导体芯片的DBR反射镜离开仅照射泵浦光的预定区域并除去其余区域,从而减小了DBR反射镜的体积,从而有利于散热。

著录项

  • 公开/公告号KR100532580B1

    专利类型

  • 公开/公告日2005-12-01

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040010139

  • 发明设计人 김철회;

    申请日2004-02-16

  • 分类号H01S5/183;

  • 国家 KR

  • 入库时间 2022-08-21 21:27:25

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