SCANNING ELECTRON MICROSCOPE AND METHOD FOR MEASURING PROCESS MARGIN BY THE SAME

摘要

is a scanning electron microscope is disclosed which is used in the manufacture of semiconductor memory devices. Such scanning electron microscope is newly injected with critical dimensions stored in the data storage unit, the data storage unit for storing and measuring the critical dimension of the pattern to be formed on the semiconductor wafer to be made of the semiconductor memory device by the exposure process, If the data comparison unit and a result of comparison by the data comparing unit for comparing the measured data in a semiconductor wafer, the critical dimension and the measured data is different from the set to have a set automatically such that the critical dimensions. By providing a scanning electron microscope equipped with the present invention is automatically set so that addition, the problem is not easy to determine if the critical dimensions exactly how much variation and due to the difference in the point of view of the operator, down the different critical dimensions are also determined exposure equipment When setting up the critical dimensions and there is an effect that is generated each time a problem that would decrease critical dimension are different.