METHOD OF FORMING PHOTORESIST PATTERNS HAVING FINE PITCH USING DOUBLE PATTERNING TECHNIQUE

摘要

A method of forming a photoresist pattern comprises providing a semiconductor substrate on which a layer to be etched is formed. The method further comprises forming a first photoresist pattern on the layer to be etched, processing the first photoresist pattern with hydrogen bromide (HBr) plasma, and forming a second photoresist pattern on the semiconductor substrate between the first photoresist patterns