SUBSTRATE SUPPORTING PLATE AND MANUFACTURING METHOD THEREOF, AND SUBSTRATE PROCESSING METHOD USING THE SAME WHICH DEPOSITION OF AMORPHOUS SILICON AND DEHYDROGENATION IS PROCESSED IN SAME CHAMBER

摘要

A susceptor capable of performing a dehydrogenation process of a high temperature, and a method capable of performing depositing and dehydrogenating processes of amorphous silicon in the same chamber are provided. A method for processing a substrate comprises: a step(ST10) of placing a substrate on a support in a process chamber; a step(ST20) of depositing a silicon layer on the substrate; a step(ST30) of performing heat treatment of the silicon layer in the process chamber; and a step(ST40) of unloading the substrate to the outside of the process chamber. A substrate support comprises: a heater; and an Al-SiC composite in which the heater is embedded. A manufacturing method of a substrate support comprises the steps of: preparing a heater; molding an Al-SiC composite in which the heater is embedded; and sintering the Al-SiC composite.