A METHOD FOR SENSING A BIT LINE PROVIDING A CONSISTENT SENSING MARGIN INTERVAL REGARDLESS OF VARIATIONS IN AN EXTERNAL POWER VOLTAGE AND A MEMORY DEVICE THEREFOR

摘要

The present invention is a sensing method having a bit line sensing margin time regardless of the change of the external voltage , and a uniform be to provide a memory device therefor , a bit line sensing method of the present invention to do this is a method for driving a semiconductor memory device having the memory cells connected to word lines and bit lines , the word line is driven by the external voltage generating a first control signal for activation ; And the driving voltage , and a core having a uniform , regardless of the bit line sensing margin time to changes in the external voltage , including the step of generating a second control signal for amplifying the potential of the first control input receiving a bit line signal features .