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POLISHING GRINDING WHEEL AND SUBSTRATE POLISHING METHOD WITH THIS GRINDING WHEEL

机译:研磨砂轮及该研磨砂轮的基体研磨方法

摘要

The present invention provides an abrading plate having self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. A method of using the abrading plate is also provided. The present invention relates to an abrading plate that produces a flat and mirror polished surface on an object with an abrading plate comprised by abrasive particles having a chemical purity of not less than 90 % and a particle size of not more than two micrometers; a binder material; and a given volume of porosity, wherein a ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10 %, not more than 60 % and 10 SIMILAR 40 by volume. The method is provided for polishing an object having a device structure that includes raised regions and depressed regions fabricated on the surface according to the steps of polishing the surface for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions to obtain a flat surface, and performing additional surface removal by supplying abrasive particles to the polishing interface to remove surface material uniformly from the entire surface. IMAGE
机译:本发明提供了一种具有自停止能力的研磨板,使得当诸如具有包括在表面上制造的凸起区域和凹陷区域的器件结构的半导体晶片的物体被抛光时,凸起区域被去除并被抛光。自动停止。还提供了一种使用研磨板的方法。研磨板技术领域本发明涉及一种研磨板,其在物体上产生平坦且镜面抛光的表面,该研磨板由化学纯度不小于90%且粒径不大于2微米的磨料颗粒组成。粘合剂材料;在给定的孔隙率下,磨料颗粒与粘合剂材料的体积比不小于1:0.5,磨粒,粘合剂材料和孔隙率的比例分别不小于10%,超过60%的体积和10类似40的体积。该方法用于抛光具有装置结构的物体,该装置结构包括用不包含磨粒的液体抛光给定持续时间的步骤,以在表面上制造凸起区域和凹陷区域,从而消除凸起区域,从而消除凸起区域。获得平坦的表面,并通过向抛光界面提供磨料颗粒以从整个表面均匀地去除表面材料来执行附加的表面去除。 <图像>

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