Photoluminescence quenching device and display on the basis of photoluminescence quenching device

摘要

The present invention can be converted to a signal voltage in the light emitting mode, and / or in the re-emission mode relates to an image display device on the basis of the light emission light which can be adjusted so as to suppress the emission suppressing device (PQD) and the light emission suppressing device (PQD). An object of the present invention is to provide an image display device on the basis of the light-emitting mode, and only a very small dark current flowing through the light emitting mode Forced Re capable of operating in two modes of the device (PQD) and the light emission suppressing device (PQD) will. Are thereby improve the performance of the image display device and / or PQD, especially improvements in the operation of a low light condition. For this purpose, the image display apparatus according to the present invention is an image display device emitter layer 4 and the hole barrier layer disposed between the electrode layers (2,5), (7) and / or the electron barrier layer 6, the includes. Hole barrier layer (7) of the conduction band (12) is lower than the conduction band energetically 8 of the emitter layer (4) and / or the electron barrier layer 6 of the valence band (11) is the emitter layer (4 typically higher energy than the valence band (9)). According to the invention the hole barrier layer 7 and / or an electron barrier layer (6) of the conduction band and do not want the carrier by controlling the energy level of the valence band (11, 12) during the reverse re-emission operation of the image display device This barrier can be prevented can be produced by injection.