首页> 外国专利> multi-layer microstrip transmission line upon dielectric post using surface MEMS technique and method thereof

multi-layer microstrip transmission line upon dielectric post using surface MEMS technique and method thereof

机译:表面MEMS技术的介电柱上的多层微带传输线及其方法

摘要

The present invention produce a dielectric pillars on the semiconductor substrate surface using surface MEMS technology and signal above the pillars relates to the form of a low-loss microstrip transmission line and placed manufacturing method, a plurality of first dielectric pillars to reduce the dielectric losses in the dielectric between the implementation oxidized porous silicon substrate top surface to the transmission line and the transmission line ground plane and making a comparison with a conventional low-loss transmission line of a millimeter wave integrated circuit using the first, by making the first signal line in the dielectric and a second dielectric pillar upper pole and a second signal on the first signal line, MEMS technology process is relatively simple, the transmission line and reduces the dielectric loss by the dielectric loss and the substrate occurring in the dielectric between the ground plane of a conventional integrated circuit element and the low-loss transmission line of a millimeter wave integrated circuit compatible with one another, and a manufacturing method thereof to be about.
机译:本发明利用表面MEMS技术在半导体衬底表面上制作电介质柱,并且在该电柱上方的信号涉及一种低损耗微带传输线的形式及其放置的制造方法,多个第一电介质柱减少了电介质损耗在实施氧化的多孔硅衬底顶面与传输线之间的介电层和传输线接地平面之间,并通过将第一信号线制成第二层,与使用第一层的毫米波集成电路的传统低损耗传输线进行比较由于电介质和第二电介质柱的上极和第二信号在第一信号线上,因此MEMS技术工艺相对简单,传输线并通过介质损耗和基底之间的电介质损耗降低了介质损耗。常规集成电路元件和低损耗传输器彼此兼容的毫米波集成电路的半导体线及其制造方法。

著录项

  • 公开/公告号KR100581387B1

    专利类型

  • 公开/公告日2006-05-23

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20030087053

  • 申请日2003-12-03

  • 分类号H01P3/08;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:48

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号