Photoresist Composition for Top-surface Imaging Process by Silylation

摘要

invention TIPS (Top-surface Imaging Process by Silylation) photoresist composition and the composition with relates to a method of forming a positive pattern by the TIPS, the following formula (1) or a photoresist composition of the present invention the addition of a crosslinking agent of formula (II) to form a hydroxy group and optionally the crosslinking of the protecting group of the crosslinking agent is a photoresist polymer in the exposed areas and, when treated with a silylating agent is a hydroxy group with relation reaction chamber takes place in the non-exposed area, so when dry developer is left with a non-exposed portion to form a positive pattern. In addition, the photoresist compositions of the present invention ArF (193nm), VUV (157nm) and EUV (13nm) light source and the like can be useful in lithographic processes using TIPS. ; [Formula 1] ; [Formula 2] ; The where, ; R ₁ , R ₂ , R ₃ , R ₄ , R ₅ , R ₆ and R ₇ are each as defined in the specification.