ION-IMPLANTATION AND SHALLOW ETCHING TO PRODUCE EFFECTIVE EDGE TERMINATION IN HIGH-VOLTAGE HETEROJUNCTION BIPOLAR TRANSISTORS

摘要

The semiconductor device while maintaining breakdown voltage as a theoretical limit or close to the semiconductor device 100 The method for improving edge termination (42) is provided at 100. The method includes using an ion implantation (40) generates the compensation region 140 around the semiconductor device 100, followed by etching by a wet chemistry includes forming a mesa 114 so 0.2~0.3 . The method, and easy to achieve nearly ideal electrical properties in a typical semiconductor device 100 and GaAs heterojunction bipolar transistor (HBT), such as edge termination in the device using the pn junction 42, a device manufactured by the edge 42 provides a new method. Grinding, sand casting, blur, or associated with the conventional mesa etching using a mask technique Burlingame chopping edge (edge beveling techniques) in place, in which the disclosed technology device (100) for generating a compensating ion implantation region 140 surrounding (40 ), and utilizes a wet chemical etching to form a shallow mesa (shallow mesa) (114).