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METHOD FOR MASKING A RECESS IN A STRUCTURE WITH A LARGE ASPECT RATIO

机译:在具有大长宽比的结构中沉积应力的方法

摘要

This specification has been selective masking method is to start. Filler is applied on the structure , the filler , as a function of the aspect ratio of the structure , when a large aspect ratio is applied to the structure to form the cavity . The filling layer is removed from said cavity , wherein the filling material is completely removed from the recessed cavity is formed by etching , regions are to be selectively exposed .
机译:此规范已被选择性掩蔽方法所启动。当将大的长径比施加到结构上形成空腔时,填料随结构的长宽比施加在结构上。从所述腔中去除填充层,其中通过蚀刻形成从凹腔中完全去除填充材料,区域将被选择性地暴露。

著录项

  • 公开/公告号KR100620978B1

    专利类型

  • 公开/公告日2006-09-14

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20047010873

  • 发明设计人 에퍼렌디르크;몰한스-페터;

    申请日2004-07-13

  • 分类号H01L21/033;H01L21/76;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:05

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