首页> 外国专利> METHOD FOR ANALYSIS OF IMPURITIES AND CENTERS OF COLORING IN FLUORIDE AND METHOD FOR PRODUCING ORIENTED MATERIAL FOR CULTIVATION OF A SINGLE CRYSTAL

METHOD FOR ANALYSIS OF IMPURITIES AND CENTERS OF COLORING IN FLUORIDE AND METHOD FOR PRODUCING ORIENTED MATERIAL FOR CULTIVATION OF A SINGLE CRYSTAL

机译:氟化物杂质和着色中心的分析方法以及单晶培养定向材料的生产方法

摘要

It is aimed at providing an analysis method of impurities (color centers) in fluoride, capable of extremely simply analyzing impurities (color centers) in fluoride. It is also aimed at providing an analysis method of impurities (color centers) in fluoride, for enabling evaluation of an effect by addition of a scavenger, before obtainment of a final single crystal. There are detected absorption peaks and the like of formed color centers and the like, by irradiating X-rays to an obtained fused material, and by measuring transmittances thereof before and after the irradiation. Based thereon, there are optimized melt conditions of a scavenger and the like, thereby enabling growth of a high purity molten raw material suitable for growth of a single crystal less in X-ray damage.
机译:目的是提供一种氟化物中杂质(色心)的分析方法,能够非常简单地分析氟化物中的杂质(色心)。本发明的目的还在于提供一种氟化物中的杂质(色心)的分析方法,以便能够在获得最终的单晶之前通过添加清除剂来评估效果。通过对获得的熔融材料照射X射线,并通过测量照射前后的透射率,来检测形成的色心等的吸收峰等。在此基础上,优化了清除剂等的熔融条件,从而使得能够生长适合于单晶生长的高纯度熔融原料,该单晶的X射线损伤较小。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号