A method for the preparation of a capacitor, with a deep trench for structural analysis and the associated structure analysis method

摘要

A method for the preparation of a capacitor (40), with a deep trench for the analysis, wherein the capacitor (40), with a deep trench in a semiconductor die (10) is provided, from which an upper side (20) and a rear side (50), as well as a substrate (30), comprising the steps of:(a) mechanical treatment of the rear side (50) of the this (10), so that a first section (31) of the substrate (30) to remove;(b) mounting of the mechanically treated this (10) by means of fastening of the upper side (20) of the this (10) on a mounting device; and(c) chemical treatment of the this (10), so that a second section (32) of the substrate (30) to enhance the at least one capacitor (40), with a deep trench for the three-dimensional view to expose.(d) removing of the capacitor (40), with a deep trench of which the (10) and fastening of the remote capacitor (40), with a deep trench at a carbon material film grid.