Process for the modification of resist structures and resist layers, from an aqueous phase

摘要

A process for the post amplification a structured resist, comprising the steps of:(a) applying a chemically amplified photoresists to a substrate, wherein the photoresist has the following components:a film-forming polymer, the acid labile groups, which, under the action of acid and groups are cleaved, release an increase in the solubility of the film-forming polymer in aqueous alkaline developers, and further comprising anchor groups for the linking of after amplification agents, wherein the anchor groups also in the form of a protected anchor group can be present;a photo acid generator;a solvent in which the film-forming polymer is soluble;(b) drying of the photoresist and the receipt of a resist film;(c) section-by-section exposure of the resist film, so that in an exposed resist is obtained, wherein in the exposed areas by the photo acid generator is released, an acid;(d) heating the resist exposed, wherein in the exposed regions of the acid-labile groups are cleaved and polar groups on the film-forming polymer are released, as a result of which..