Test layout used in the production of deep trench capacitive memory elements comprises a first test pattern arranged in the middle position of a test region, a second test pattern close to the first test pattern and a third test pattern

摘要

Test layout (100) comprises a first test pattern (A) arranged in the middle position of a test region (20), a second test pattern (B) arranged close to the first test pattern at 45[deg] to the first test pattern and a third test pattern arranged close to the first test pattern along an X-axis of the reference-X-Y-coordinates. The test patterns are arranged in an H-shape within the test region. Preferred Features: The test layout is arranged on a photo-mask with an arrangement deep trench capacitive patterns. Rectangular symmetrical patterns (12, 14) have a dimension which is the same as the deep trench capacitive patterns.