首页> 外国专利> Photolithographic photomask production is such that the temperature used in solvent removal and/or in heating immediately before development is at 50-90degreesC for 25-35 seconds

Photolithographic photomask production is such that the temperature used in solvent removal and/or in heating immediately before development is at 50-90degreesC for 25-35 seconds

机译:光刻光掩模的生产应确保在显影前立即用于去除溶剂和/或加热的温度为50-90摄氏度,持续25-35秒

摘要

Photolithographic production of a photomask by the standard steps of coating the substrate with a photolacquer, heating for solvent removal, illumination, heating and finally developing with a basic medium is such that the temperature used in the solvent removal and/or in the heating immediately preceding development is at 50-90[deg]C for 25-35 seconds.
机译:通过以下标准步骤进行的光掩模的光刻生产:用光漆涂覆基材,加热以去除溶剂,照射,加热并最终用碱性介质显影,使得在去除溶剂和/或紧接在其之前的加热中使用的温度在50-90℃显影25-35秒。

著录项

  • 公开/公告号DE102004025202A1

    专利类型

  • 公开/公告日2005-12-15

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20041025202

  • 发明设计人 MIERAU UTA;KOBISCH JOERG;

    申请日2004-05-22

  • 分类号G03F7/26;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:56

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