首页> 外国专利> Selective coating method used in the semiconductor industry comprises preparing a substrate, covering predetermined surface regions of a surface with a mask, inserting a coating controlling agent and catalytically depositing a thin layer

Selective coating method used in the semiconductor industry comprises preparing a substrate, covering predetermined surface regions of a surface with a mask, inserting a coating controlling agent and catalytically depositing a thin layer

机译:半导体工业中使用的选择性涂覆方法包括准备衬底,用掩模覆盖表面的预定表面区域,插入涂覆控制剂并催化沉积薄层

摘要

Selective coating method comprises preparing a substrate (101), covering predetermined surface regions of a substrate surface (103) with a mask, inserting a coating controlling agent (104a,104b) into the substrate in the regions of a non-covered surface of the substrate and catalytically depositing a thin layer (105) on the surface of the substrate. An independent claim is also included for: a thin layer system produced.
机译:选择性涂覆方法包括准备衬底(101),用掩模覆盖衬底表面(103)的预定表面区域,将涂覆控制剂(104a,104b)插入衬底的未覆盖表面的区域中。在基底表面上催化沉积薄层(105)。还包括以下方面的独立权利要求:生产的薄层系统。

著录项

  • 公开/公告号DE102004028031A1

    专利类型

  • 公开/公告日2006-01-05

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20041028031

  • 申请日2004-06-09

  • 分类号H01L21/314;H01L21/8242;H01L21/762;C23C16/40;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:56

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