Resist system, useful for lithographic procedures, e.g. for preparing semiconductor components, comprises polymer/copolymer with acid labile group and cyclic polysiloxane containing group and/or cross linked polysiloxane containing group

摘要

Resist system (I), for lithographic procedures, preferably for preparing semiconductor components with wavelengths of 0.1-150 nm, comprises a polymer or copolymer with at least an acid labile group and at least a cyclic polysiloxane containing group and/or cross linked polysiloxane containing group. Resist system (I), for lithographic procedures, preferably for preparing semiconductor components with wavelengths of 0.1-150 nm, comprises a polymer or copolymer with at least an acid labile group and at least a cyclic polysiloxane containing group (preferably of the component type [Dx]) and/or cross linked polysiloxane containing group (preferably the component type [TxQy]). D : (R)2SiO2/2; T : RSiO3/2; R : alkyl, aryl or H; and Q : SiO4/4. Where x is greater than or equal to 3 and y is greater than or equal to 0. An independent claim is also included for lithographic procedure, for preparing semiconductor component, using (I), comprises providing (I) on a substrate, preferably a wafer, exposing (I) on the substrate and developing (I).