Method for measuring load current in load circuit of semiconductor component, involves balancing voltage difference between voltage drop at sense resistor and at internal load resistance

摘要

A method for measuring a load current (IL) of a load transistor (MO) driven between a load terminal (LT) and a working voltage terminal (+VDD,GND) in which a sense transistor (M1) is operated parallel to the load transistor (MO), a voltage drop deriving from a sense current (IS) controlled by a sense transistor (M1) and proportional to the load current (IL) is evaluated at a sense resistance (RS) between the respective operating terminal and the sense transistor. A voltage different between the voltage drop and the sense resistor (IS) and the voltage drop at an internal load resistance (RB) is balanced and thus the working point of the sense transistor is brought into agreement with the working point of the load transistor (MO). - Independent claims are included for the following: (A) A circuit arrangement for measuring a load current.(B) A semiconductor component with positive- or negative-operating voltage terminal.