Complementary metal oxide semiconductor image sensor comprises first micro-lens layer on entire surface of color filter layers, and second micro-lens layers having different refractive index from that of first micro-lens layer

摘要

A complementary metal oxide semiconductor image sensor comprises: a first micro-lens layer (36) on an entire surface of color filter layers (34), to condense the light; and second micro-lens layers (37) on the first microlens layer in correspondence with respective photosensitive devices (31), where second micro-lens layer has different refractive index from that of the first micro-lens layer. A complementary metal oxide semiconductor (CMOS) image sensor comprises: photosensitive devices on a semiconductor substrate; an insulating interlayer (32) on the photosensitive devices; color filter layers in correspondence with the respective photosensitive devices, to filter the light by respective wavelengths; a first micro-lens layer on an entire surface of the color filter layers, to condense the light; and second micro-lens layers on the first microlens layer in correspondence with the respective photosensitive devices, where second micro-lens layer has different refractive index from that of the first micro-lens layer.