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Semiconductor component for use in integrated circuit application, has electrically conductive stubbles with form like via fillings, provided on conductor surface of lower metal insulated metal capacitor electrode
Semiconductor component for use in integrated circuit application, has electrically conductive stubbles with form like via fillings, provided on conductor surface of lower metal insulated metal capacitor electrode
The component has a lower metal insulated metal capacitor electrode arranged on a substrate, where a conductor surface (13) of the electrode has electrically conductive stubbles (4) having form like via fillings (12). A capacitor dielectric (5) overlaps the electrode. An electrically conductive layer (6) arranged as an upper capacitor electrode on the dielectric refills the spaces between the stubbles. An independent claim is also included for a method for manufacturing a semiconductor unit.
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