Plant for synthesis and crystal growth of semiconductor using vertical gradient freeze crystal-growing ovens, comprises inside reaction chamber that has sublimation chamber and synthesis chamber connected over a mixing chamber and a valve

摘要

Synthesis chamber (2) contains a crucible (3) for admission of element (5) and another element (10) is connected directly or indirectly into the sublimation chamber. The crucible exhibits a channel at the base for the admission of a single crystal germ. The valve is connected at one or several places of the sublimation, synthesis and mixing chamber (7). An independent claim is included for procedure of synthesis and crystal growth of semiconductor.