Image sensor for collecting incident light, converting to electrical charges for image processing has floating diffusion region or region of charge-coupled component with buried channel in substrate and that contacts second channel region

摘要

The image sensor has a substrate (100) of a first conductivity type, a photodiode region (142) of a second conductivity type, a component region with accumulated holes on a surface of the substrate and above the photodiode region, a transfer gate electrode (132), first and second channel regions (112,114) of the first and second conductivity types and a floating diffusion region (152) or a region of a charge-coupled component with buried channel in the substrate and that electrically contacts the second channel region. An independent claim is also included for a method of manufacturing an inventive device.