Memory device e.g. dynamic random access memory device, has input/output buffer stage with terminal logic that is configured in order to receive data bits sequentially on data terminals with data frequency during writing operation

摘要

The device has memory arrays, and a logic stage configured in order to arrange data bits on a set of data lines during a writing operation, and to arrange data bits on another set of data lines during a reading operation. An input/output buffer stage exhibits a terminal logic (150), which is configured in order to receive data bits sequentially on data terminals with the data frequency during the writing operation. An independent claim is also included for a method for exchanging a data with a memory device.