首页> 外国专利> method for stopping of ions and impurities in plasma strahlungquellen in extreme - ultaviolett or soft x-ray bands by using krypton

method for stopping of ions and impurities in plasma strahlungquellen in extreme - ultaviolett or soft x-ray bands by using krypton

机译:k在极紫外或软X射线带中阻止血浆Strahlungquellen中离子和杂质的方法

摘要

A method and device for filtering ions and small debris by using krypton or its mixtures to fill the chamber of the EUV-radiation source. The method can be combined with mechanical methods of filtering debris particles with large size (greater than one micron) and allows to obtain plasma EUV-radiation without polluting debris and to extend the useful life of the mirrors of a microlithography apparatus. IMAGE
机译:一种通过使用k或其混合物填充EUV辐射源腔室来过滤离子和小碎片的方法和设备。该方法可以与过滤大尺寸(大于一微米)碎屑颗粒的机械方法相结合,并且可以在不污染碎屑的情况下获得等离子体EUV辐射,并可以延长微光刻设备的反射镜的使用寿命。 <图像>

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