process for the production of a resistive 1t1r speicherzellenfeldes

摘要

A method of forming a 1T1R resistive memory array structure on a semiconductor substrate comprises: a) forming a polycide (54) /oxide (56) /nitride (58) gate stack overlying a gate oxide on the semiconductor substrate; b) producing source (62) and drain (64) regions adjacent to the gate stack; c) performing a salicide process to form a silicide over the exposed source and drain regions; d) forming nitride sidewalls (66) along the gate stack; e) depositing and planarizing a silicon oxide insulation layer (70) level with the gate stack; f) patterning and etching bit contacts that connect to the drain regions; g) depositing and planarizing a bottom electrode (74); h) depositing a layer of resistive memory material (76); and i) forming top electrodes (78) over the resistive memory material (76). IMAGE