Overlay mark designing method, e.g. for semiconductor device, involves illuminating overlay mark with probe beam, and measuring diffraction resulting from interaction of probe beam and overlay mark

摘要

Overlay mark designing method involves illuminating an overlay mark with a probe beam, and measuring a diffraction resulting from an interaction of the probe beam and overlay mark. Parameters of the overlay mark are selected and optimized to measure sensitivity of overlay measurement. An optimization algorithm is used to optimize the parameters of the overlay mark, which creates the sensitivity of overlay measurement.