INDIUM NITRIDE/INDIUM PHOSPHIDE/TITANIUM DIOXIDE PHOTOSENSITIZED ELECTRODE AND ITS MANUFACTURING METHOD

摘要

PPROBLEM TO BE SOLVED: To provide an InN/InP/TiOSB2/SBphotosensitized electrode capable of absorbing sunlight, and capable of generating separated electron positive hole pair with excellent chemical resistance and to provide its manufacturing method. PSOLUTION: The electrode comprises a substrate, a titanium dioxide thin film layer, and a photosensitized layer comprising indium phosphide photosensitized thin film and indium nitride photosensitized thin film. In its manufacturing method, the titanium dioxide thin film layer is coated on the substrate. The substrate comprising the titanium dioxide thin film layer is put in a reactive chamber. The indium phosphide solution containing nano fine particles is applied on the titanium dioxide thin film layer to form the indium phosphide photosensitized thin film. Then, ammonia gas and a compound containing indium is introduced and excited with ultraviolet light, so that the indium nitride photosensitized thin film is grown on the indium phosphide photosensitized thin film. A photosensitized layer is formed from the indium phosphide photosensitized thin film and indium nitride photosensitized thin film. PCOPYRIGHT: (C)2007,JPO&INPIT