首页> 外国专利> MASK FOR X-RAY LITHOGRAPHY, MANUFACTURING METHOD THEREOF, MANUFACTURING METHOD OF LIGHT REFLECTION PREVENTION STRUCTURE USING THE SAME, FORMING BODY USING LIGHT REFLECTION PREVENTION STRUCTURE, AND MANUFACTURING METHOD OF GLASS OBJECT TO BE FORMED OR RESIN OBJECT TO BE FORMED

MASK FOR X-RAY LITHOGRAPHY, MANUFACTURING METHOD THEREOF, MANUFACTURING METHOD OF LIGHT REFLECTION PREVENTION STRUCTURE USING THE SAME, FORMING BODY USING LIGHT REFLECTION PREVENTION STRUCTURE, AND MANUFACTURING METHOD OF GLASS OBJECT TO BE FORMED OR RESIN OBJECT TO BE FORMED

机译:X射线光刻技术的面罩,其制造方法,使用相同结构的防反射结构的制造方法,使用防反射结构的主体形成,以及用于制造或制造的玻璃物体的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a mask for X-ray lithography that can be manufactured inexpensively and easily.;SOLUTION: The mask 1 for X-ray lithography is used to manufacture the light reflection prevention structure 22 having a light reflection irregular structure 23 by X-ray lithography. The mask 1 for X-ray lithography has a first substrate 10 for transmitting X rays, and an X-ray shielding film 11 formed on the first substrate 10. The X-ray shielding film 11 includes an X-ray shielding material, and contains a plurality of X-ray transmission sections 11a. The plurality of X-ray transmission sections 11a are arranged along the direction of a film surface at a pitch that is not larger than the wavelength of light where reflection is suppressed by the light reflection prevention irregular structure 23.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种可以廉价且容易地制造的用于X射线光刻的掩模;解决方案:用于X射线光刻的掩模1用于制造具有光反射不规则结构23的光反射防止结构22。通过X射线光刻。用于X射线光刻的掩模1具有用于透射X射线的第一基板10和形成在第一基板10上的X射线屏蔽膜11。X射线屏蔽膜11包括X射线屏蔽材料,并且包含多个X射线透射部11a。多个X射线透射部11a沿着膜表面的方向以不大于通过防止光反射的凹凸构造23抑制反射的光的波长的间距排列。COPYRIGHT:(C)2007 ,JPO&INPIT

著录项

  • 公开/公告号JP2007220732A

    专利类型

  • 公开/公告日2007-08-30

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC IND CO LTD;

    申请/专利号JP20060036764

  • 发明设计人 TAMURA TAKAMASA;UMETANI MAKOTO;

    申请日2006-02-14

  • 分类号H01L21/027;G02B1/11;G03F1/16;

  • 国家 JP

  • 入库时间 2022-08-21 21:13:47

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