首页> 外国专利> ALUMINUM MATERIAL HAVING SUPERIOR ETCHING CHARACTERISTIC FOR ELECTROLYTIC CAPACITOR ELECTRODE, MANUFACTURING METHOD THEREFOR, ELECTRODE MATERIAL FOR ALUMINUM ELECTROLYTIC CAPACITOR, AND ALUMINUM ELECTROLYTIC CAPACITOR

ALUMINUM MATERIAL HAVING SUPERIOR ETCHING CHARACTERISTIC FOR ELECTROLYTIC CAPACITOR ELECTRODE, MANUFACTURING METHOD THEREFOR, ELECTRODE MATERIAL FOR ALUMINUM ELECTROLYTIC CAPACITOR, AND ALUMINUM ELECTROLYTIC CAPACITOR

机译:具有电解电容器电极的优异蚀刻特性的铝材料,其制造方法,电解电容器的电极材料和电解电容器的铝

摘要

PROBLEM TO BE SOLVED: To provide an aluminum material having superior etching characteristics for an electrolytic capacitor electrode, which can reliably increase the surface area, by making etch pits densely and uniformly formed on its surface, using the etch pits as starting points, and making them further deeply etched into tunnel-shaped pits so as to be hardly combined with each other, and consequently can increase the capacitance.;SOLUTION: The aluminum material 1 has an oxide film 3 formed on its surface, and aluminum-matrix-exposed sites 5 having no oxide film 3 present thereon formed in such a dispersed state that the perimeter of the site is surrounded by the oxide film, wherein a ratio of the total area of the aluminum-matrix-exposed sites 5 to the total surface area is 10 to 50%.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种具有优异的电解电容器电极的蚀刻特性的铝材料,该铝材料通过以蚀刻凹坑为起点在其表面上致密且均匀地形成蚀刻凹坑,并能够可靠地增加表面积。它们进一步深深地蚀刻到隧道形的凹坑中,以致彼此几乎不结合,从而可以增加电容。解决方案:铝材料1的表面上形成有氧化膜3,并且铝基体暴露在外图5中没有形成氧化膜3,该氧化膜3以该位置的周边被该氧化膜包围的分散状态形成,其中铝基质暴露的位置5的总面积与总表面积之比为10到50%。;版权所有:(C)2007,日本特许厅和INPIT

著录项

  • 公开/公告号JP2007016255A

    专利类型

  • 公开/公告日2007-01-25

    原文格式PDF

  • 申请/专利权人 ONO SACHIKO;SHOWA DENKO KK;

    申请/专利号JP20050196234

  • 申请日2005-07-05

  • 分类号C25D11/04;C23C10/02;C23C10/04;C25D11/24;C25F3/04;H01G9/055;

  • 国家 JP

  • 入库时间 2022-08-21 21:13:12

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