MAGNETIC RESISTANCE SENSOR AND LOWER LAYER ETCHED AT OBLIQUE ANGLE FOR IMPROVED EXCHANGE BIAS STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a magnetic resistance sensor with improved fixed magnetic field intensity and its constituting method.;SOLUTION: A magnetic resistance sensor 200 includes a fixed layer structure fixed by exchange-coupling to an antiferromagnetic (AFM) layer 232. The AFM layer 232 is constituted on the lower layer 238 having a treated surface 233 having anisotropic unevenness. By the anisotropic unevenness formed by ion etching forming an angle, as a result, the fixed magnetic field intensity is improved. The lower layer 238 can comprise a seed layer 242 and a thin crystal material layer 244 like a PtMn formed thereon. The magnetic layer may comprise a first sub-layer 248 comprises NiFeCr and a second sub-layer 250 comprises NiFe formed thereon. Next, the AFM layer 232 is accumulated on the magnetic layer. Further, the magnetic layer is, by combining with the AFM layer by exchange-coupling, fixed strongly by intensive anisotropy provided by a surface texture of the lower layer.;COPYRIGHT: (C)2007,JPO&INPIT