SUBSTRATE AND METHOD (HYBRID CRYSTAL SUBSTRATE WITH SURFACE ORIENTATIONS HAVING ONE OR A PLURALITY OF SOI REGIONS OR BULK SEMICONDUCTOR REGIONS OR HAVING BOTH OF THEM)

摘要

PROBLEM TO BE SOLVED: To provide a substrate for semiconductor device including a plurality of semiconductor-on-insulator (SOI) wafers that are coupled with each other in a single stack.;SOLUTION: The remote end of this stack includes a first SOI region with a first semiconductor layer of a certain thickness having a first surface orientation. The surface of this single stack can further comprise a non-SOI region or at least a second SOI region, or comprise both of them. This non-SOI region can comprise a bulk silicon extending through all insulator layers of the single stack and having a thickness different from that of a first silicon layer. A second SOI region has a second semiconductor layer having a thickness different from that of the first semiconductor layer or the surface orientation different from the first surface orientation, or both different. Thus, this substrate can permit the formation of different devices on the optimum substrate region with the different surface orientation, the different thickness, the different structure from the bulk or SOI, or the combination of these different ones.;COPYRIGHT: (C)2007,JPO&INPIT