首页> 外国专利> Production manner of the substrate for ink jet record and the substrate for the ink jet recording head, to possess the heat energy generation component which generates the ink jet recording head, and the

Production manner of the substrate for ink jet record and the substrate for the ink jet recording head, to possess the heat energy generation component which generates the ink jet recording head, and the

机译:具有用于产生喷墨记录头的热能产生成分的喷墨记录用基板和喷墨记录头用基板的制造方式,以及

摘要

PROBLEM TO BE SOLVED: To efficiently cool an inkjet recording head by ink.;SOLUTION: An oxide film H1112 of a wafer rear face is patterned, whereby an ink supply port H1102 is formed in an Si substrate H1101 from an opening H1114 of the oxide film by anisotropic etching with the use of TMAH. An Al sacrifice layer H1110 part higher in the etching rate than the Si substrate H1101 is rapidly etched by a speed of several times to an Si part. The ink supply port H1102 is opened up to the Si substrate H1101 surface. Anisotropic etching is stopped at a time point when the ink supply port H1102 is opened. Thus an Si thin film part H1108 of a thickness t1 is formed at a part immediately below a heating resistor H1103.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:通过墨水有效地冷却喷墨记录头。解决方案:对晶片背面的氧化膜H1112进行构图,从而从氧化物的开口H1114在Si基板H1101中形成供墨口H1102。通过使用TMAH进行各向异性蚀刻来形成薄膜。蚀刻速率比Si衬底H1101高的Al牺牲层H1110部分以几倍的速度被快速蚀刻到Si部分。墨水供给口H1102在Si基板H1101的表面开口。在墨供给口H1102打开的时间点停止各向异性蚀刻。因此,在紧接在加热电阻器H1103下方的部分处形成厚度为t 1 的Si薄膜部分H1108。版权所有:(C)2005,JPO&NCIPI

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