首页> 外国专利> The production mannered null following expression of the titanium content thin film which uses the solution raw materials and the said raw materials which for organicity metal chemical vapor deposition method

The production mannered null following expression of the titanium content thin film which uses the solution raw materials and the said raw materials which for organicity metal chemical vapor deposition method

机译:使用溶液原料的钛含量薄膜和用于有机金属化学气相沉积法的所述原料的表达后,生产方式无效。

摘要

PROBLEM TO BE SOLVED: To provide a raw material solution for organometallic chemical vapor deposition with which uniform, stable vaporization can be performed, and a titanium-containing thin film of high purity can be obtained at a high film deposition rate, and to provide the titanium-containing thin film of high purity which has excellent adhesion as a base of a copper thin film.;SOLUTION: The raw material solution for the organometallic chemical vapor deposition is obtained by dissolving a titanium complex shown by following formula (1) into an amine solvent, concretely of one or more kinds of compounds selected from the group consisting of n-methyl-2-pyrrolidone, dimethylaniline, di-t-butylaniline, di-n-butylaniline, diisopropylaniline, tri-t- butylaniline and triisopropylaniline; in formula (1), R is a 1 to 4 straight-chain or branched alkyl group.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种用于有机金属化学气相沉积的原料溶液,通过该溶液可以进行均匀,稳定的汽化,并且可以以高的膜沉积速率获得高纯度的含钛薄膜,高纯度的含钛薄膜,具有优良的附着力,可作为铜薄膜的基底。胺溶剂,具体是选自n-甲基-2-吡咯烷酮,二甲基苯胺,二叔丁基苯胺,二正丁基苯胺,二异丙基苯胺,三叔丁基苯胺和三异丙基苯胺中的一种或多种化合物;在式(1)中,R为1-4个直链或支链烷基。版权所有:(C)2003,日本特许厅

著录项

  • 公开/公告号JP3894010B2

    专利类型

  • 公开/公告日2007-03-14

    原文格式PDF

  • 申请/专利权人 三菱マテリアル株式会社;

    申请/专利号JP20020073913

  • 发明设计人 齋 篤;小木 勝実;

    申请日2002-03-18

  • 分类号C23C16/18;H01L21/285;

  • 国家 JP

  • 入库时间 2022-08-21 21:08:46

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号