The process which forms Al wiring in production

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and the semiconductor device in which Al is prevented from being protruded during annealing.;SOLUTION: A Ti/TiN film 13 is formed over the whole such as an upper surface of a dielectric antireflection film 5, a lateral side of Al wiring 6, an exposed surface of an insulating layer 1, and the like. Continuously, hydrogen annealing is performed to alloy Al of the Al layer 3 with Ti of a Ti layer, a Ti/TiN layer 4 and the Ti/TiN film 13, such that a coating 14 composed of TiAl₃ is formed around the Al wiring 6. A stress of the dielectric antireflection film 5 generated by annealing operates upon an upper part of the Al wiring 6 to help the granular growth of Al along with the coating 14 on the Al wiring 6, but is canceled by a reaction of the coating 14 formed on the side wall of the Al wiring 6. As a result, the granular growth of Al is not helped, such that the protrusion of Al is suppressed.;COPYRIGHT: (C)2004,JPO