While continuing moving the stage which mounts

摘要

PURPOSE: To exhibit the effect of a CP lithography method sufficiently and realize the lithography whose throughput is significantly high by a method wherein the stage speeds of the respective combinations of candidate cells are calculated from the lithography time by a variable forming beam only and the reduced lithography times which are obtained when the respective candidate cells are characterized and the lithography time is introduced from the respective stage speeds. ;CONSTITUTION: Lithpgraphy time required to plot the sample areas by using basic pattern apertures only and respective reduced time when respective candidate cells are characterized and plotted are obtained for all the sample areas. Then the sum of the reduced time corresponding to all the combinations formed by the respective candidate cells in aperture masks 36 are deducted from the lithography time to calculate the lithography time in respective sample areas. The frame lithography time is obtained from the lithography time of the sample area which shows the longest lithography time in that frame. The combination of the candidate cells which offers the shortest lithography time in the whole lithography region is formed on the aperture mask 36.;COPYRIGHT: (C)1995,JPO