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Calculate the difference of the aforementioned

机译:计算上述差异

摘要

PROBLEM TO BE SOLVED: To provide a method for relatively easily analyzing and evaluating the internal structure of a thin film made of a material, which includes a plurality of different chemical structures as partial structures and in which each partial structure hardly has any differences in viscoelastic characteristics, electric characteristics, or optical characteristics, without causing difficulties in segmenting substrates through the use of a surface shape observing apparatus such as AFM (atomic force microscope) capable of observing the surface of the thin film at high resolution of nanometer scale.;SOLUTION: The method for analyzing the internal structure of the thin film comprises a process for gradually etching the thin film in its in-plane direction through the use of at least two or more steps without causing differences in etching conditions, a process for measuring the surface shape of the thin film before and after each etching step, a process for storing the measured surface shape of the thin film as coordinate numerical value data, a process for determining the numerical value of etching rate at each part of the interior of the thin film by computing the differences of the coordinate numerical value data each between the etching steps, and a process for displaying the etching speed at each part of the thin film.;COPYRIGHT: (C)2004,JPO
机译:解决的问题:提供一种相对容易地分析和评估由材料制成的薄膜的内部结构的方法,该材料包括多个不同的化学结构作为部分结构,并且每个部分结构的粘弹性几乎没有差异通过使用诸如AFM(原子力显微镜)之类​​的表面形状观察设备能够在以纳米级高分辨率观察薄膜表面的过程中,不会在分割基板时造成困难的情况下实现特性,电特性或光学特性的特性。 :分析薄膜的内部结构的方法包括以下步骤:通过使用至少两个或更多个步骤在不引起蚀刻条件差异的情况下在平面内方向上逐渐蚀刻薄膜;测量表面的方法每个蚀刻步骤之前和之后的薄膜形状,用于存储测量的s的过程作为坐标数值数据的薄膜的表面形状,通过计算每个蚀刻步骤之间的坐标数值数据的差来确定薄膜内部各部分的蚀刻速率的数值的过程以及薄膜各部分的刻蚀速度显示方法。版权所有:(C)2004,日本特许厅

著录项

  • 公开/公告号JP3852590B2

    专利类型

  • 公开/公告日2006-11-29

    原文格式PDF

  • 申请/专利权人 宇部興産株式会社;

    申请/专利号JP20020225715

  • 发明设计人 八尾 滋;福永 謙二;

    申请日2002-08-02

  • 分类号G01N1/28;G01N1/32;G01N13/16;

  • 国家 JP

  • 入库时间 2022-08-21 21:07:22

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