Pattern formation manner, production manner of the micro device, production manner of the thin film magnetic head, production manner of the magnetic head slider and production manner of the magnetic head device, being the pattern formation manner which forms the resist

摘要

A metal film made of a metal material (e.g., NiFe, CoFeNi, or FeCo) including an iron atom is formed on a substrate (S 101 ). Subsequently, the metal film formed on the substrate is plasma-processed in an environment including a gas (e.g., an oxygen gas having a tetrafluoromethane or trifluoromethane gas added thereto) containing oxygen and fluorine atoms (S 103 ). Then, a resist material (e.g., a chemically amplified positive resist material) is applied onto the plasma-processed metal film, so as to form a resist film (S 105 ). Thereafter, the resist film is partly removed, so as to expose a part of the surface of metal film in conformity to a desirable pattern, thereby forming a resist frame (S 107 ).