Semiconductor device manufacturing method and phosphorus-containing silazane composition, phosphorus-containing silica membrane, phosphorus-containing siliceous filler, of phosphorus-containing silica membrane

摘要

The present invention aims to provide a phosphorus-containing siliceous material having a relative dielectric constant of 3.5 or less. Phosphorus-containing silazane composition according to the invention is characterized in that it comprises at least one phosphorus compound and polyalkylsilazanes in an organic solvent. By pre-baked at 50~300 ℃ temperature, a film obtained by coating on a substrate the composition, then calcined in an inert atmosphere 300~700 ℃ temperature, phosphorus-containing silica membrane obtained be. The phosphorus compounds according to the invention, it is a phosphazene compound or phosphoric acid esters of pentavalent preferred.