Asymmetrical Random Access Memory Cell, Memory Comprising Asymmetrical Memory Cells And Method To Operate Such A Memory

摘要

Asymmetrical random access memory cell, memory comprising asymmetrical memory cells and method to operate such a memory The invention relates to an asymmetrical random access memory cell (1) comprising cross coupled inverters (2, 3) which are driven at their nodes (22, 32) by separate bit-lines (b1t, b1c) of a pair of complementary bit-lines, which are connected via a pass-transistors (21, 31), wherein said cross coupled inverters (2, 3) have different switching thresholds and exhibit asymmetrical physical behaviours, wherein an additional pass-transistor (4) is provided in series to one of the pass-transistors (21) between one of the nodes (22) and its dedicated bit-line (blc). Further the invention relates to a random access memory comprising such memory cells and to a method of operating such a memory.