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OVERLAY ALIGNMENT MARK AND ALIGNMENT METHOD FOR THE FABRICATION OF TRENCH-CAPACITOR DRAM DEVICES
OVERLAY ALIGNMENT MARK AND ALIGNMENT METHOD FOR THE FABRICATION OF TRENCH-CAPACITOR DRAM DEVICES
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机译:沟槽电容器DRAM器件制造的重叠对准标记和对准方法
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摘要
A small-size (w0.5 micrometers) alignment mark in combination with a “k1 process” is proposed, which is particularly suited for the fabrication of trench-capacitor DRAM devices which requires highly accurate AA-DT and GC-DT overlay alignment. The “k1 process” is utilized to etch away polysilicon studded in the alignment mark trenches and to refresh the trench profile, thereby improving overlay alignment accuracy and precision.
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