首页> 外国专利> Wide-Band High-Gain Limiting Amplifier with Parallel Resistor-Transistor Source Loads

Wide-Band High-Gain Limiting Amplifier with Parallel Resistor-Transistor Source Loads

机译:具有并联电阻-晶体管源负载的宽带高增益限幅放大器

摘要

An amplifier has a wide bandwidth and a high gain by using parallel loads. Each load has a load resistor and a load p-channel transistor in parallel. The drain voltages of differential n-channel transistors can be set by the load resistors, while switching current is provided by the load p-channel transistors. The parallel load provides a high impedance to the drain nodes yet still provides driving current. A transconductance stage with a pair of differential transistors and two parallel loads drives a shunt-shunt-feedback stage that has another pair of differential transistors and two more parallel loads. Shunt resistors between the gate and drain of the differential transistors in the shunt-shunt-feedback stage provide shunt feedback and low impedance. Several pairs of transconductance and shunt-shunt-feedback stages can be cascaded together. The cascaded amplifier may be used as a signal repeater.
机译:通过使用并行负载,放大器具有宽带宽和高增益。每个负载具有并联的负载电阻器和负载p沟道晶体管。差分n沟道晶体管的漏极电压可以由负载电阻设置,而开关电流由负载p沟道晶体管提供。并联负载为漏极节点提供了高阻抗,但仍提供了驱动电流。具有一对差分晶体管和两个并联负载的跨导级驱动一个并联-并联-反馈级,该级具有另一对差分晶体管和两个以上的并联负载。在并联-并联-反馈级中,差分晶体管的栅极和漏极之间的并联电阻可提供并联反馈和低阻抗。几对跨导级和并联-反馈级可以级联在一起。级联放大器可以用作信号中继器。

著录项

  • 公开/公告号US2007008035A1

    专利类型

  • 公开/公告日2007-01-11

    原文格式PDF

  • 申请/专利权人 WING FAAT LIU;MICHAEL Y. ZHANG;

    申请/专利号US20050160730

  • 发明设计人 WING FAAT LIU;MICHAEL Y. ZHANG;

    申请日2005-07-06

  • 分类号H03F3/45;

  • 国家 US

  • 入库时间 2022-08-21 21:06:19

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