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INCREASING ELECTROMIGRATION LIFETIME AND CURRENT DENSITY IN IC USING VERTICALLY UPWARDLY EXTENDING DUMMY VIA
INCREASING ELECTROMIGRATION LIFETIME AND CURRENT DENSITY IN IC USING VERTICALLY UPWARDLY EXTENDING DUMMY VIA
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机译:通过垂直向上扩展虚拟,增加了IC中的电离寿命和电流密度
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摘要
An integrated circuit with increased electromigration lifetime and allowable current density and methods of forming same are disclosed. In one embodiment, an integrated circuit includes a conductive line connected to at least one functional via, and at least one dummy via having a first, lower end electrically connected to the conductive line and a second upper end electrically unconnected (isolated) to any conductive line. Each dummy via extends vertically upwardly from the conductive line and removes a portion of a fast diffusion path, i.e., metal to dielectric cap interface, which is replaced with a metal to metallic liner interface. As a result, each dummy via reduces metal diffusion rates and thus increases electromigration lifetimes and allows increased current density.
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