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Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
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机译:形成诸如铑-铑阻挡层之类的含铑层的方法
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摘要
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
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机译:提供了一种使用式L y Sub> RhY z Sub>的配合物在诸如半导体晶片的基板上形成含铑层的方法。还提供了化学气相共沉积的铂-铑合金阻挡层和电极,用于集成电路的单元电介质,特别是用于DRAM单元电容器的单元电介质。合金阻挡层可在氧化重结晶步骤中保护周围材料免受氧化,并在高温处理步骤中保护电池电介质免受氧气损失。还提供了用于CVD-共沉积铂-铑合金扩散阻挡层的方法。
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