首页> 外国专利> METHOD FOR REALIZING A MULTISPACER STRUCTURE, USE OF SAID STRUCTURE AS A MOLD AND CIRCUITAL ARCHITECTURES OBTAINED FROM SAID MOLD

METHOD FOR REALIZING A MULTISPACER STRUCTURE, USE OF SAID STRUCTURE AS A MOLD AND CIRCUITAL ARCHITECTURES OBTAINED FROM SAID MOLD

机译:实现多空间结构的方法,将SAID结构用作模具以及从SAID获得的电路体系结构

摘要

A method realizes a multispacer structure including an array of spacers having same height. The method includes realizing, on a substrate, a sacrificial layer of a first material; b) realizing, on the sacrificial layer, a sequence of mask spacers obtained by SnPT, which are alternately obtained in at least two different materials; c) chemically etching one of the two different materials with selective removal of the mask spacers of this etched material and partial exposure of the sacrificial layer; d) chemically and/or anisotropically etching the first material with selective removal of the exposed portions of the sacrificial layer; e) chemically etching the other one of the two different materials with selective removal of the mask spacers of this etched material and obtainment of the multispacer structure.
机译:一种方法实现了包括具有相同高度的间隔物阵列的多间隔物结构。该方法包括在衬底上实现第一材料的牺牲层;以及b)在牺牲层上实现通过S n PT获得的一系列掩模间隔物,这些掩模间隔物是在至少两种不同的材料中交替获得的; c)化学腐蚀两种不同材料中的一种,同时有选择地去除该腐蚀材料的掩模间隔物并牺牲部分牺牲层; d)化学和/或各向异性地蚀刻第一材料,同时选择性地去除牺牲层的暴露部分; e)化学刻蚀两种不同材料中的另一种,同时选择性地去除该刻蚀材料的掩模间隔物并获得多间隔物结构。

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