Fuzzy logic system for process control in chemical mechanical polishing

摘要

The present invention provides a versatile system for controlling chemical mechanical polishing in a semiconductor manufacturing process. The system of the present inventions utilizes an in-situ chemical mechanical polishing system, having some type of measurement or metrology function, to bulk polish a semiconductor wafer to a first target threshold. Once the first target has been reached, a fuzzy logic control function, communicatively coupled to the in-situ chemical mechanical polishing system, takes control of further polishing. Measurement data from the measurement function is processed by the fuzzy logic control function, which then adjusts additional polishing time for the polishing system to render a desired wafer topography.