ICP source for iPVD for uniform plasma in combination high pressure deposition and low pressure etch process

摘要

A system and method is provided for using an ionized physical vapor deposition (iPVD) source for uniform metal deposition having uniform plasma density at relatively low (5 mTorr) and relatively high (65 mTorr) operation. Magnet structure is combined with an inductively coupled plasma (ICP) source to shift the plasma toward the chamber periphery during low pressure operation to enhance uniformity, while plasma uniformity is promoted by randomization or thermalization of the plasma at higher pressures. Accordingly, uniformity is provided for both deposition and etching in combined sequential deposition-etch processes and for no-net-deposition (NND) and low-net-deposition (LND) deposition-etching processes.